| PART |
Description |
Maker |
| STIP10 STI60 STI80 STI90 STIP805 STIP60 |
SURGE ARRESTER GDT 90V SMD
DIODE TVS 9.1V 600W BIDIR 5% SMB
TRANSISTOR | BJT | NPN | 900V V(BR)CEO | 1A I(C) | TO-5
DIODE TVS 47V 600W UNIDIR 5% SMB 晶体管|晶体管|叩| 600V的五（巴西）总裁| TO - 39封装
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| MDA920A6 MDA920A4 MDA920A7 MDA920A2 MDA920A5 MDA92 |
1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 25 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Motorola Mobility Holdings, Inc.
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| UFT120 UFT12010 UFT12015 UFT12020 UFT12130 UFT1214 |
60 A, 500 V, SILICON, RECTIFIER DIODE
60 A, 700 V, SILICON, RECTIFIER DIODE
ULTRA FAST RECOVERY MODULES 60 A, 100 V, SILICON, RECTIFIER DIODE
60 A, 800 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| KYZ25A6 KYZ25K6 KYZ25A05 KYZ25A1 KYZ25A2 KYZ25A3 K |
Fuses, Field replaceable 2410 size, in clips 25 A, 400 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes 25 A, 100 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| BZG03C BZG03C120 BZG03C13 BZG03C51 BZG03C15 BZG03C |
Silicon Z-Diodes
Silicon ZDiodes
From old datasheet system
Silicon Z-Diode(稳压应用电压范围10-270V的齐纳二极管)
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
|
